In the latter case the implied feedback loops will be contained within the memory elements themselves . 在后一種情況下,隱含的反饋回路包含在記憶元件的內(nèi)部。
Static memory elements 靜態(tài)記憶器組件
Dynamic memory elements 動態(tài)記憶單位
Cellsin dynamic memory elements must be repeatedly accessed in order to avoid a fading away of their contents 動態(tài)存儲元件的存儲單元為了避免內(nèi)容逐漸消失,一定要不斷地進行訪問操作。
To switch the resistance of the mram element from low ( 1 ) to high ( 0 ) , or vice versa , an electric current must flow through inputs connected to the memory element 為了將mram單元的電阻由低( 1 )變高( 0 ) ,或者反過來,電流必須流經(jīng)連接記憶單元的輸入線。